bcp 54m ... bcp 56m 1 oct-20-1999 npn silicon af transistors for af driver and output stages high collector current low collector-emitter saturation voltage complementary types: bcp 51m...bcp 53m(pnp) vpw05980 1 2 3 5 4 type marking pin configuration package bcp 54m bcp 55m bcp 56m bas bes bhs 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 4 n.c. 4 n.c. 4 n.c. 5 = c 5 = c 5 = c sct-595 sct-595 sct-595 maximum ratings parameter symbol bcp 54m bcp 55m bcp 56m unit collector-emitter voltage v ceo 45 60 80 v collector-base voltage v cbo 45 60 100 emitter-base voltage v ebo 5 5 5 dc collector current i c 1 a peak collector current i cm 1.5 base current i b 100 ma peak base current i bm 200 total power dissipation , t s 77 c p tot 1.7 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance 98 junction ambient 1) r thja k/w junction - soldering point r thjs 43 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcp 54m ... bcp 56m 2 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values typ. max. min. dc characteristics v (br)ceo 45 60 80 - - - - - - v bcp 54m bcp 55m bcp 56m collector-emitter breakdown voltage i c = 10 ma, i b = 0 bcp 54m bcp 55m bcp 56m v (br)cbo 45 60 100 collector-base breakdown voltage i c = 100 a, i b = 0 - - - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 - 5 v (br)ebo na collector cutoff current v cb = 30 v, i e = 0 100 i cbo - - a collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c 20 - - i cbo - dc current gain 1) i c = 5 ma, v ce = 2 v - h fe - 25 - 250 h fe dc current gain 1) i c = 150 ma, v ce = 2 v 40 - - - h fe 25 dc current gain 1) i c = 500 ma, v ce = 2 v - v 0.5 - - v cesat collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - 1 ac characteristics mhz transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz - 100 f t - 1) pulse test: t = 300 s, d = 2%
bcp 54m ... bcp 56m 3 oct-20-1999 dc current gain h fe = f ( i c ) v ce = 2v ehp00268 bcp 54...56 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 c 100 5 25 c -50 c 10 4 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 200 400 600 800 1000 1200 1400 1600 mw 2000 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bcp 54m ... bcp 56m 4 oct-20-1999 collector cutoff current i cbo = f ( t a ) v cb = 30v 0 10 ehp00269 bcp 54...56 a t 150 -1 4 10 cbo na 50 100 0 10 1 10 3 10 c 10 2 max typ transition frequency f t = f ( i c ) v ce = 10v 10 ehp00267 bcp 54...56 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55 base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 10 ehp00270 bcp 54...56 besat v 0 4 10 c ma 0.2 1 10 2 10 3 10 0.4 0.6 0.8 1.2 v c 100 25 c -50 c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 ehp00271 bcp 54...56 cesat v 0.4 v 0.8 10 0 10 1 3 10 c ma c 2 10 0.2 0.6 10 4 100 25 c c -50
|
